Product Overview
7N Ammonia is an electronic-grade specialty gas with a purity level of 99.99999%. It is primarily synthesized from nitrogen and hydrogen under high temperature and pressure, followed by multi-stage distillation, adsorption, and purification processes. As a critical process gas in semiconductor, compound semiconductor, and advanced display manufacturing, its ultra-high purity is essential for ensuring thin-film quality, device performance, and production yield. Even trace impurities-such as moisture, oxygen, hydrocarbons, and metal ions-can lead to device defects, making 7N Ammonia an indispensable core material in high-end manufacturing.
Basic Information
| CAS No. | 7664-41-7 |
| UN No. | UN1005 (Ammonia, anhydrous, compressed gas) |
| Hazard Classification | Class 2.3 Toxic Gas, Class 8 Corrosive Substance |
Key Attributes & Parameters
| Purity | ≥ 99.99999% (7N Grade) |
| Key Impurity Levels (typical values, in ppb) |
Moisture (H₂O): ≤ 10 ppb Oxygen (O₂): ≤ 5 ppb Total Hydrocarbons (THC): ≤ 5 ppb Metal Ions (Fe, Ni, Cu, Na, K, etc.): ≤ 0.01 ppb |
| Packaging | Cylinders, Y-cylinders, ISO tube trailers (customizable based on customer needs) |
| Filling Pressure | Typically 20–50 bar (depending on the container) |
Features & Advantages
Ultra-High Purity and Consistency
Utilizes multi-stage purification technology and online analysis to ensure that every batch of 7N Ammonia meets the most stringent semiconductor process requirements with consistent purity and impurity levels.
Extremely Low Particulate and Metal Contamination
Terminal filtration down to 0.003 μm ensures minimal particulate and metal ion content, preventing contamination of sensitive chip structures.
Stable Supply Chain and Full Traceability
Implements closed-loop control from gas source, purification, and filling to analytical testing, providing complete and traceable quality inspection reports (CoA) to ensure supply chain security.
Professional Technical and Safety Support
Offers comprehensive solutions including gas usage guidance, pipeline design, and safety training to ensure customers can safely and efficiently utilize 7N high-purity ammonia gas.
Functional Characteristics
As a Nitrogen Source
In epitaxial processes such as Metal-Organic Chemical Vapor Deposition (MOCVD), 7N high-purity ammonia gas serves as the key nitrogen precursor for growing III-V compound semiconductors like gallium nitride (GaN) and aluminum nitride (AlN).
As a Reactive Gas
In semiconductor etching and silicon nitride (Si₃N₄) thin-film deposition, its high-purity characteristics ensure film uniformity, low defect density, and excellent electrical properties.
As a Carrier or Doping Gas
In specific processes, it can be used for delivery or doping, where its purity directly impacts device threshold voltage, mobility, and reliability.
Primary Application Fields
Semiconductor Manufacturing
Used for silicon nitride/titanium nitride deposition and epitaxial growth of III-V compound semiconductors (e.g., GaN, GaAs).
Display Technology
Serves as a high-purity nitrogen source in thin-film encapsulation and TFT backplane fabrication for OLED and Micro-LED displays.
Photovoltaics
Employed in passivation layer deposition for high-efficiency solar cells (e.g., HJT, TOPCon).
Research & Advanced Materials
Development of novel nitride materials, quantum dot synthesis, and preparation of high-purity nitrides.
Customer Collaboration Case
We have established a long-term strategic partnership with a world-leading third-generation semiconductor manufacturer. For their GaN-on-Si power device mass production line, the customer demanded near-limit specifications for moisture and metal impurities in 7N high-purity ammonia gas (moisture ≤ 5 ppb, metal ions ≤ 0.005 ppb). We customized a dedicated purification module and online monitoring system for them and implemented uninterrupted, contamination-free point-of-use supply via a dedicated pipeline. Throughout the collaboration, the supplied 7N high-purity ammonia gas helped the customer reduce epitaxial wafer defect density by 30%, significantly improving device yield and reliability, thereby solidifying their leading position in the high-voltage power semiconductor market. This case exemplifies our strong capability in providing integrated ultra-high-purity gas solutions.
FAQ
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