7N Ammonia

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7N Ammonia
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7N Ammonia is an electronic-grade specialty gas with a purity level of 99.99999%. It is primarily synthesized from nitrogen and hydrogen under high temperature and pressure, followed by multi-stage distillation, adsorption, and purification processes. As a critical process gas in semiconductor, compound semiconductor, and advanced display manufacturing, its ultra-high purity is essential for ensuring thin-film quality, device performance, and production yield.
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Bottled Gas
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Description

Product Overview

 

7N Ammonia is an electronic-grade specialty gas with a purity level of 99.99999%. It is primarily synthesized from nitrogen and hydrogen under high temperature and pressure, followed by multi-stage distillation, adsorption, and purification processes. As a critical process gas in semiconductor, compound semiconductor, and advanced display manufacturing, its ultra-high purity is essential for ensuring thin-film quality, device performance, and production yield. Even trace impurities-such as moisture, oxygen, hydrocarbons, and metal ions-can lead to device defects, making 7N Ammonia an indispensable core material in high-end manufacturing.

 

Basic Information

 

CAS No. 7664-41-7
UN No. UN1005 (Ammonia, anhydrous, compressed gas)
Hazard Classification Class 2.3 Toxic Gas, Class 8 Corrosive Substance

 

Key Attributes & Parameters

 

Purity ≥ 99.99999% (7N Grade)
Key Impurity Levels (typical values, in ppb)

Moisture (H₂O): ≤ 10 ppb

Oxygen (O₂): ≤ 5 ppb

Total Hydrocarbons (THC): ≤ 5 ppb

Metal Ions (Fe, Ni, Cu, Na, K, etc.): ≤ 0.01 ppb

Packaging Cylinders, Y-cylinders, ISO tube trailers (customizable based on customer needs)
Filling Pressure Typically 20–50 bar (depending on the container)

 

Features & Advantages

 

Ultra-High Purity and Consistency

Utilizes multi-stage purification technology and online analysis to ensure that every batch of 7N Ammonia meets the most stringent semiconductor process requirements with consistent purity and impurity levels.

Extremely Low Particulate and Metal Contamination

Terminal filtration down to 0.003 μm ensures minimal particulate and metal ion content, preventing contamination of sensitive chip structures.

Stable Supply Chain and Full Traceability

Implements closed-loop control from gas source, purification, and filling to analytical testing, providing complete and traceable quality inspection reports (CoA) to ensure supply chain security.

Professional Technical and Safety Support

Offers comprehensive solutions including gas usage guidance, pipeline design, and safety training to ensure customers can safely and efficiently utilize 7N high-purity ammonia gas.

 

Functional Characteristics

 

As a Nitrogen Source

In epitaxial processes such as Metal-Organic Chemical Vapor Deposition (MOCVD), 7N high-purity ammonia gas serves as the key nitrogen precursor for growing III-V compound semiconductors like gallium nitride (GaN) and aluminum nitride (AlN).

As a Reactive Gas

In semiconductor etching and silicon nitride (Si₃N₄) thin-film deposition, its high-purity characteristics ensure film uniformity, low defect density, and excellent electrical properties.

As a Carrier or Doping Gas

In specific processes, it can be used for delivery or doping, where its purity directly impacts device threshold voltage, mobility, and reliability.

 

Primary Application Fields

 

Semiconductor Manufacturing

Used for silicon nitride/titanium nitride deposition and epitaxial growth of III-V compound semiconductors (e.g., GaN, GaAs).

Display Technology

Serves as a high-purity nitrogen source in thin-film encapsulation and TFT backplane fabrication for OLED and Micro-LED displays.

Photovoltaics

Employed in passivation layer deposition for high-efficiency solar cells (e.g., HJT, TOPCon).

Research & Advanced Materials

Development of novel nitride materials, quantum dot synthesis, and preparation of high-purity nitrides.

 

Customer Collaboration Case

 

We have established a long-term strategic partnership with a world-leading third-generation semiconductor manufacturer. For their GaN-on-Si power device mass production line, the customer demanded near-limit specifications for moisture and metal impurities in 7N high-purity ammonia gas (moisture ≤ 5 ppb, metal ions ≤ 0.005 ppb). We customized a dedicated purification module and online monitoring system for them and implemented uninterrupted, contamination-free point-of-use supply via a dedicated pipeline. Throughout the collaboration, the supplied 7N high-purity ammonia gas helped the customer reduce epitaxial wafer defect density by 30%, significantly improving device yield and reliability, thereby solidifying their leading position in the high-voltage power semiconductor market. This case exemplifies our strong capability in providing integrated ultra-high-purity gas solutions.

 

FAQ

 

Q: How does your company deal with fluctuations in the prices of chemical products? Does it have a price protection policy?

A: Response measures: Establish a monitoring system for raw material prices, and reserve key raw materials in advance; Sign long-term framework agreements with customers, and stipulate the price adjustment mechanism (such as adjusting product prices based on the fluctuation range of raw material prices). Price protection policy: For long-term cooperative customers, if the market price drops significantly (by ≥5%) within a short period after the order is confirmed (such as within 7 working days), the price can be negotiated for adjustment or corresponding subsidies can be provided; for large orders, the price can be locked until the delivery date to avoid the risk of price fluctuations.

 

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